STS3622 Overview
S amHop Microelectronics C orp. S T S 3622 J an, 03 2006 Dual N-Channel Enhancement Mode Field Effect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) Max ID 3A R DS (ON) S uper high dense cell design for low R DS (ON ). 65 @ V G S = 10V 90 @ V G S =4.5V R ugged and reliable.