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S T S 3621
S amHop Microelectronics C orp.
Oct. 24 2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
30V
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-30V
ID
3A
R DS (ON) ( m Ω )
Max
ID
-2A
R DS (ON) ( m Ω )
Max
50 @ V G S = 10V 65 @ V G S = 4.5V D1
90 @ V G S = -10V 135 @ V G S = -4.5V D2
S OT 26 Top View
G1 S2 G2
1 2 3
6 5 4
D1 S1 D2
G1 S1 N-ch G2 S2 P -ch
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID
N-C hannel P-C hannel 30 20 3 2.7 12 1.25 1.25 0.8 -55 to 150 -30 20 -2 1.8 -8 -1.
STS3621 Datasheet
