STS3623 Overview
S amHop Microelectronics C orp. S T S 3623 J un, 09 2006 Dual N-Channel Enhancement Mode Field Effect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ) Max 50 @ V G S = 10V 65 @ V G S = 4.5V R ugged and reliable.