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K4Y54164UF Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4Y54164UF datasheet preview

Datasheet Details

Part number K4Y54164UF
Datasheet K4Y54164UF K4Y54084UF Datasheet (PDF)
File Size 3.45 MB
Manufacturer Samsung Semiconductor
Description XDR/RDRAM
K4Y54164UF page 2 K4Y54164UF page 3

K4Y54164UF Overview

K4Y5416(/08/04)4UF Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81 XDR DRAM Version 1.0( Jan. 2005) - Delete “Preliminary” - Based on the Rambus XDR DRAMTM Datasheet Version 0.85 Version 1.0 Jan. K4Y5416(/08/04)4UF Overview XDR DRAM The Rambus XDR DRAM device is a general-purpose high-performance memory device suitable for use in a broad range...

K4Y54164UF Key Features

  • Highest pin bandwidth available
  • 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling
  • Bi-directional differential RSL(DRSL)
  • Flexible read/write bandwidth allocation
  • Minimum pin count
  • Programmable on-chip termination
  • Adaptive impedance matching
  • Reduced system cost and routing plexity
  • Highest sustained bandwidth per DRAM device
  • Up to 8000 MB/s sustained data rate
Samsung Semiconductor logo - Manufacturer

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