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KM688100 - 1M x 8-Bit Low Power and Low Voltage CMOS Static RAM

Description

The KM688100 families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support industrial operating temperature ranges for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation with low data retention current.

Features

  • Process Technology: TFT.
  • Organization: 1M x8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2.0V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 44-TSOP2-400F/R CMOS SRAM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) Preliminary KM688100 Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date June 22, 1999 Remark Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 June 1999 www.DataSheet4U.com Preliminary KM688100 Family 1Mx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES • Process Technology: TFT • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.
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