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K1S2816BCM - 8Mx16 bit Page Mode Uni-Transistor Random Access Memory

General Description

The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device supports 4 page read operation and Industrial temperature range.

The device supports dual chip selection for user interface.

Key Features

  • UtRAM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K1S2816BCM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft - Design Target Draft Date April 12, 2004 Remark Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter as Min.5ns - Added comment on standby current(ISB1) measure condition as "Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measured after 60ms from the time when standby mode is set up." - Changed ISB1 value(< 85°C) from 200µA into 250µA Finalize - Changed tOH from 5ns to 3ns April 06, 2005 Preliminary 1.