K1S2816BCM Overview
The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature pensated Self Refresh mode for the standby power saving at room temperature range. Process Technology: CMOS Organization: 8M x16 bit Power Supply Voltage: 1.7~2.0V Three State Outputs patible with Low Power SRAM • Support 4 page read mode • Package Type: TBD PRODUCT FAMILY 1) Reserved for future use SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. -2Revision 1.0 April 2005 .. K1S2816BCM POWER UP SEQUENCE UtRAM During the Power Up mode, the standby current can not be guaranteed. To get the stable standby current level, at least one cycle of active operation...
K1S2816BCM Key Features
- Support 4 page read mode
- Package Type: TBD
- 2Revision 1.0 April 2005