K1S2816BCM Datasheet | Samsung Semiconductor

.. Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Ut RAM Revision History Revision No. History 0.0 Initial Draft - Design Target Draft Date April 12, 2004 Remark Preliminary Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)" in page 8 and added t WHP(WE High Pulse Width) parameter as Min.5ns - Added ment on standby current(ISB1) measure condition as "Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measured after 60ms from the time when standby mode is set up." - Changed ISB1 value(< 85°C) from 200µA into 250µA Finalize - Changed t OH from 5ns to 3ns April 06, 2005 Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 April 2005 .. 8M x 16 bit Page Mode Uni-Transistor CMOS RAM Features - - - - - Ut RAM GENERAL DESCRIPTION The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature pensated Self Refresh mode for the standby power saving at room temperature...