K1S3216B1C Datasheet | Samsung Semiconductor

Preliminary Document Title 2Mx16 bit Uni-Transistor Random Access Memory .. Ut RAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80u A to 100u A Draft Date January 16, 2003 June 9, 2003 Remark Advanced Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.1 June 2003 Preliminary 2M x 16 bit Uni-Transistor CMOS RAM Features - - - - - - .. Ut RAM GENERAL DESCRIPTION The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7V~2.1V Three State Outputs patible with Low Power SRAM Dual Chip selection support - Package Type: 48-FBGA-6.0x8.0 PRODUCT...