K1S321615M
K1S321615M is 2Mx16 bit Uni-Transistor Random Access Memory manufactured by Samsung Semiconductor.
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
..
Ut RAM
Revision History
Revision No. History
0.0 Initial Draft
- Design target Revised
- Change package type from FBGA to TBGA.
- Improve operating current from 30m A to 25m A.
- Change input and output reference voltage from 1.1V to 1.5V at AC test condition.
- Expand max operating voltage from 3.0V to 3.3V.
- Expand max operating temperature from 70°C to 85°C.
- Release speed from 70/85ns to 100ns.
- Release standby current form 170µA to 200µA.
- Add Power up timing diagram.
- Add AC characteristics for continuous write. Finalize
- Release standby current form 200µA to 250µA.
- Release deep power down current form 10µA to 20µA.
- Release t WC for continuous write operation from 100ns to 110ns.
- Release t CW for continuous write operation from 90ns to 100ns.
- Release t AW for continuous write operation from 90ns to 100ns.
- Release t BW for continuous write operation from 90ns to 100ns.
- Release t WP for continuous write operation from 90ns to 100ns. Revised
- Add product list Revised
- Improve standby current from 250µA to 150µA.
Draft Date
Remark
September 4, 2000 Advance
February 9,...
