Datasheet Details
| Part number | K1S321615M |
|---|---|
| Manufacturer | Samsung semiconductor |
| File Size | 206.57 KB |
| Description | 2Mx16 bit Uni-Transistor Random Access Memory |
| Datasheet |
 K1S321615M Datasheet
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| Part number | K1S321615M |
|---|---|
| Manufacturer | Samsung semiconductor |
| File Size | 206.57 KB |
| Description | 2Mx16 bit Uni-Transistor Random Access Memory |
| Datasheet |
K1S321615M Datasheet
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The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell.
The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design.
The device also supports deep power down mode for low standby current.