Download K1S321615M Datasheet PDF
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K1S321615M Description

The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell. The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.

K1S321615M Key Features

  • patible with Low Power SRAM