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K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

General Description

The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K Cycle.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S560832A 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832C 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832E-NC75 SDRAM 256Mb E-die
K4S560832E-NCL75 SDRAM 256Mb E-die

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S560832B CMOS SDRAM Revision 0.1 (March 10, 2000) • • • • Deleted -80 Product Specification Changed the Current values of ICC5, ICC6 Changed tOH of -75 Product from 2.7ns to 3ns Changed the Bank select address in SIMPLIFIED TRUTH TABLE Notes 4. BA0 Low Low High High BA1 Low High Low High Before Bank A Bank B Bank C Bank D After Bank A Bank C Bank B Bank D Revision 0.2 (May 30, 2000) • Eliminate "Preliminary" • Add "133MHz" in IBIS SPECIFICATION Rev. 0.2 May.2000 K4S560832B 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.