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K6F4016U6G-F - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F4016U6G families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

Key Features

  • Preliminary CMOS SRAM.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K6F4016U6G 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K6F4016U6G Family Document Title Preliminary CMOS SRAM 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date June 11, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 June 2003 K6F4016U6G Family FEATURES • • • • • • Preliminary CMOS SRAM GENERAL DESCRIPTION The K6F4016U6G families are fabricated by SAMSUNG′s advanced full CMOS process technology.