K6F4016U6G-F Key Features
- Preliminary CMOS SRAM
- 2Revision 0.0 June 2003
- Part: K6F4016U6G-F
- Manufacturer: Samsung Semiconductor
- Size: 180.21 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F4016U6G | 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U4G | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U4G-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4E | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4E-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4016U6G-F Description
The K6F4016U6G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.