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K6F4016U6G Datasheet 256kx16 Bit Super Low Power And Low Voltage Full CMOS Static Ram

Manufacturer: Samsung Semiconductor

Overview: K6F4016U6G Family Document Title Preliminary CMOS SRAM 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date June 11, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.

General Description

The K6F4016U6G families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The family also supports low data retention voltage for battery back-up operation with low data retention current.

Key Features

  • Preliminary CMOS SRAM.

More Datasheets from Samsung Semiconductor

Part Number Description
K6F4016U6G-F 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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K6F4016U4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008R2C 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2G 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1008V2C 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM

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