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K7B401825B Datasheet

Manufacturer: Samsung Semiconductor
K7B401825B datasheet preview

Datasheet Details

Part number K7B401825B
Datasheet K7B401825B_Samsungsemiconductor.pdf
File Size 263.99 KB
Manufacturer Samsung Semiconductor
Description 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B401825B page 2 K7B401825B page 3

K7B401825B Overview

The K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; Write cycles are internally self-timed...

K7B401825B Key Features

  • Synchronous Operation
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • 3.3V+0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
  • LBO Pin allows a choice of either a interleaved burst or a linear burst
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K7B161825A 512Kx36 & 1Mx18 Synchronous SRAM
K7B163625A 512Kx36 & 1Mx18 Synchronous SRAM
K7B321825M 1Mx36 & 2Mx18 Synchronous SRAM
K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM
K7B323625M 1Mx36 & 2Mx18 Synchronous SRAM
K7B323635C 1Mx36 & 2Mx18 Synchronous SRAM
K7B801825B 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

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