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K7B403625B Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7B403625B datasheet preview

Datasheet Details

Part number K7B403625B
Datasheet K7B403625B K7B Datasheet (PDF)
File Size 470.43 KB
Manufacturer Samsung Semiconductor
Description 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B403625B page 2 K7B403625B page 3

K7B403625B Overview

The.

K7B403625B Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.3V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
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K7B403625M 128Kx36-Bit Synchronous Burst SRAM
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K7B401825B 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B161825A 512Kx36 & 1Mx18 Synchronous SRAM
K7B163625A 512Kx36 & 1Mx18 Synchronous SRAM
K7B321825M 1Mx36 & 2Mx18 Synchronous SRAM
K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM
K7B323625M 1Mx36 & 2Mx18 Synchronous SRAM
K7B323635C 1Mx36 & 2Mx18 Synchronous SRAM
K7B801825B 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

K7B403625B Distributor

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