K7B403625M - 128Kx36-Bit Synchronous Burst SRAM

Samsung semiconductor

Datasheet Details

Part number	K7B403625M
Manufacturer	Samsung semiconductor
File Size	436.99 KB
Description	128Kx36-Bit Synchronous Burst SRAM
Datasheet	K7B403625M Datasheet
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K7B403625M Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. History Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value from 10mA to 20mA. Feb. 11. 1998 0.2 Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Change VIH max from 5.5V to VDD+0.5V April. 14. 1998 0.3 Change ISB2 value from 20mA to 30mA. May. 13. 1998 Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V. 1.0 Final spec Release May. 15. 1998 2.0 Add VDDQ Supply voltage( 2.5V ) Dec. 02.

Published: Nov 23, 2017 |