• Part: K7B403225B
  • Description: 128Kx36/x32 & 256Kx18 Synchronous SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 470.43 KB
Download K7B403225B Datasheet PDF
Samsung Semiconductor
K7B403225B
K7B403225B is 128Kx36/x32 & 256Kx18 Synchronous SRAM manufactured by Samsung Semiconductor.
- Part of the K7B comparator family.
FEATURES - Synchronous Operation. - 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. - Self-Timed Write Cycle. - On-Chip Address and Control Registers. - VDD= 3.3V+0.3V/-0.165V Power Supply. - VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. - 5V Tolerant Inputs Except I/O Pins. - Byte Writable Function. - Global Write Enable Controls a full bus-width write. - Power Down State via ZZ Signal. - LBO Pin allows a choice of either a interleaved burst or a linear burst. - Three Chip Enables for simple depth expansion with No Data Contnention ; 2cycle Enable, 1cycle Disable. - Asynchronous Output Enable Control. - ADSP, ADSC, ADV Burst Control Pins. - TTL-Level Three-State Output. - 100-TQFP-1420A . - Operating in meical and industrial temperature range. GENERAL DESCRIPTION The...