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K7Q163662B - (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Download the K7Q163662B datasheet PDF. This datasheet also covers the K7Q161862B variant, as both devices belong to the same (k7q161862b / k7q163662b) 512kx36 & 1mx18 qdrtm b2 sram family and are provided as variant models within a single manufacturer datasheet.

General Description

Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE Data Outputs Write Control Read Control Byte Write Control Pin Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test D

Key Features

  • 1.8V/2.5V +0.1V/-0.1V Power Supply.
  • I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
  • Separate independent read and write data ports with concurrent read and write operation.
  • HSTL I/O.
  • Full data coherency, providing most current data.
  • Synchronous pipeline read with self timed early write.
  • Registered address, control and data input/output.
  • DDR(Double Data Rate) Interface on read and write.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K7Q161862B_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description
K7Q163664B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q163652A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163654A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q163682A (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
K7Q161852A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com K7Q163662B K7Q161862B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM Revision History Rev. No. 0.0 1.0 History 1. Initial document. 1. Final spec release Draft Date Jan. 27, 2004 Mar. 18, 2004 Remark Advance Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Mar. 2004 Rev 1.0 K7Q163662B K7Q161862B 512Kx36-bit, 1Mx18-bit QDRTM SRAM FEATURES • 1.8V/2.5V +0.1V/-0.1V Power Supply. • I/O Supply Voltage 1.