Samsung semiconductor K7Q163662B
512Kx36 & 1Mx18 QDRTM b2 SRAM
| Part No. | K7Q163662B |
|---|---|
| Datasheet | K7Q163662B Download |
| Manufacturer |  Samsung semiconductor |
| Description | 512Kx36 & 1Mx18 QDRTM b2 SRAM |
| Buy | Stock & Price |
FEATURES
● 1.8V/2.5V +0.1V/-0.1V Power Supply.● I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
● Separate independent read and write data ports with concurrent read and write operation
● HSTL I/O.
● Full data coherency, providing most current data .
● Synchronous pipeline read with self timed early write.
● Registered address, control and data input/output.
● DDR(Double Data Rate) Interface on read and write ports.
● Fixed 2-bit burst for both read and write operation.
● Clock-stop supports to reduce current.
● Two input clocks(K and K) for accurate DDR timing at clock rising edges only.
● Two Input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches.
● Single address bus.
● Byte writable function.
● Sepatate read/write control pin(R and W)
● Simple depth expansion with no data contention.
● Programmable output impedance.
● JTAG 1149.1 compatible test access port.
● 165FBGA(11x15 ball aray FBGA) with body size of 13x15mm 5...
