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K7Q163682A

Manufacturer: Samsung Semiconductor

K7Q163682A datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7Q163682A datasheet preview

K7Q163682A Datasheet Details

Part number K7Q163682A
Datasheet K7Q163682A K7Q161882A Datasheet (PDF)
File Size 383.92 KB
Manufacturer Samsung Semiconductor
Description (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
K7Q163682A page 2 K7Q163682A page 3

K7Q163682A Overview

Changed at x36 organization. Reserved pin for high density name change from NC to Vss/SA 1. Modify Draft Date May, 22 2001 Remark Advance Sep,03 2001 Advance 0.2 Nov.

K7Q163682A Key Features

  • 1.8V+0.1V/-0.1V Power Supply
  • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O
  • Separate independent read and write data ports with concurrent read and write operation
  • HSTL I/O
  • Full data coherency, providing most current data
  • Synchronous pipeline read with self timed early write
  • Registered address, control and data input/output
  • DDR(Double Data Rate) Interface on read and write ports
  • Fixed 2-bit burst for both read and write operation
  • Clock-stop supports to reduce current
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More Datasheets from Samsung Semiconductor

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Part Number Description
K7Q163652A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163654A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q163662B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163664B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q161852A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161854A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q161862B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161864B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q161882A (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM

K7Q163682A Distributor

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