Datasheet4U Logo Datasheet4U.com

K4D551638H - 256Mbit GDDR SDRAM

Description

The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

  • 2.35V ~ 2.7V power supply for device operation.
  • 2.35V ~ 2.7V power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of the system clock.
  • Differential clock input.
  • No Write-Interrupted by Read F.

📥 Download Datasheet

Datasheet preview – K4D551638H

Datasheet Details

Part number K4D551638H
Manufacturer Samsung
File Size 235.41 KB
Description 256Mbit GDDR SDRAM
Datasheet download datasheet K4D551638H Datasheet
Additional preview pages of the K4D551638H datasheet.

📁 Similar Datasheet

  • K4D263238I-VC - 128M-Bit GDDR SDRAM (Samsung Electronics)
  • K4D26323GC - 128Mbit GDDR SDRAM (Samsung semiconductor)
  • K4D26323QG - 128Mbit GDDR SDRAM (Samsung semiconductor)
Other Datasheets by Samsung

Full PDF Text Transcription

Click to expand full text
K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
Published: |