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K4D623238B-GC Key Features

  • 2.5V + 5% power supply for device operation
  • VDD/VDDQ = 2.8V ± 5% for -33
  • VDD/VDDQ = 2.5V ± 5% for -60/-55/-50/-45/-40
  • SSTL_2 patible inputs/outputs
  • 4 banks operation
  • MRS cycle with address key programs -. Read latency 3,4,5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type
  • Full page burst length for sequential burst type only
  • Start address of the full page burst should be even
  • All inputs except data & DM are sampled at the positive going edge of the system clock
  • Differential clock input

Related Samsung Semiconductor Datasheets

Part Number Description
K4D261638 128Mbit GDDR SDRAM
K4D261638F 128Mbit GDDR SDRAM
K4D261638K 128Mbit GDDR SDRAM
K4D261638K-LC40 128Mbit GDDR SDRAM
K4D261638K-LC50 128Mbit GDDR SDRAM

K4D623238B-GC Description

FOR 512K x 32Bit x 4 Bank DDR SDRAM The K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG ’ s high performance CMOS technology.