K4D623238B-GC Overview
FOR 512K x 32Bit x 4 Bank DDR SDRAM The K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG ’ s high performance CMOS technology.
K4D623238B-GC Key Features
- 2.5V + 5% power supply for device operation
- VDD/VDDQ = 2.8V ± 5% for -33
- VDD/VDDQ = 2.5V ± 5% for -60/-55/-50/-45/-40
- SSTL_2 patible inputs/outputs
- 4 banks operation
- MRS cycle with address key programs -. Read latency 3,4,5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type
- Full page burst length for sequential burst type only
- Start address of the full page burst should be even
- All inputs except data & DM are sampled at the positive going edge of the system clock
- Differential clock input