• Part: K9F4G08B0B
  • Description: FLASH MEMORY
  • Manufacturer: Samsung Semiconductor
  • Size: 1.19 MB
K9F4G08B0B Datasheet (PDF) Download
Samsung Semiconductor
K9F4G08B0B

Description

Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit.

Key Features

  • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K +
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.)
  • Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/528Byte ECC) - Data Retention : 10 Years
  • mand Driven Operation
  • Unique ID for Copyright Protection