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K9F4G08B0B Datasheet Flash Memory

Manufacturer: Samsung Semiconductor

Overview: K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Voltage Supply - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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