K9F4G08B0B Overview
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K9F4G08B0B Key Features
- Voltage Supply
- 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V
- 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
K9F4G08B0B Applications
- Samsung Electronics reserves the right to change products or specification without notice