Datasheet Summary
N-channel Enhanced mode TO-220 MOSFET
Features
TO-220
- High ruggedness
- Low RDS(ON) (Typ 5.2mΩ)@VGS=10V
- Low Gate Charge (Typ 94nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
12 3
1. Gate 2.Drain 3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes
BVDSS : 60V
: 120A
RDS(ON) : 5.2mΩ
1 3
Item
Sales Type
SW P 055R06E7T
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