SW055R68E7T Description
Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW055R68E7T Key Features
- High ruggedness
- Low RDS(ON) (Typ 5.6mΩ)@VGS=10V
- Low Gate Charge (Typ 94nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification