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SW4N65 - N-Channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 2.6 Ω)@VGS=10V.
  • Gate Charge (Typ 18nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested BVDSS : 650V ID : 4.0A RDS(ON) : 2.6ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source 1 3 General.

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Datasheet preview – SW4N65

Datasheet Details

Part number SW4N65
Manufacturer Samwin
File Size 891.36 KB
Description N-Channel MOSFET
Datasheet download datasheet SW4N65 Datasheet
Additional preview pages of the SW4N65 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr SAMWIN TO-220F TO-220 SW4N65 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 650V ID : 4.0A RDS(ON) : 2.6ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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