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SW4N65 - N-Channel MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 2.6 Ω)@VGS=10V.
  • Gate Charge (Typ 18nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested BVDSS : 650V ID : 4.0A RDS(ON) : 2.6ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source 1 3 General.

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Datasheet Details

Part number SW4N65
Manufacturer Samwin
File Size 891.36 KB
Description N-Channel MOSFET
Datasheet download datasheet SW4N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SAMWIN TO-220F TO-220 SW4N65 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 650V ID : 4.0A RDS(ON) : 2.6ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.