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SW4N70L - N-channel MOSFET

General Description

1.

Gate 2.

Drain 3.

Key Features

  • High ruggedness.
  • Low RDS(ON) (Typ 0.8Ω)@VGS=10V.
  • Low Gate Charge (Typ 18nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW4N70L
Manufacturer Samwin
File Size 1.02 MB
Description N-channel MOSFET
Datasheet download datasheet SW4N70L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED,Charge, Adaptor TO-220F TO-251N TO-252 1 23 1 23 1 23 BVDSS : 700V ID : 4A RDS(ON) : 0.8Ω 2 1 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.