SW4N70L Overview
Source This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW4N70L Key Features
- High ruggedness
- Low RDS(ON) (Typ 0.8Ω)@VGS=10V
- Low Gate Charge (Typ 18nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application: LED,Charge, Adaptor