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SW4N70L - N-channel MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 0.8Ω)@VGS=10V.
  • Low Gate Charge (Typ 18nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet preview – SW4N70L

Datasheet Details

Part number SW4N70L
Manufacturer Samwin
File Size 1.02 MB
Description N-channel MOSFET
Datasheet download datasheet SW4N70L Datasheet
Additional preview pages of the SW4N70L datasheet.

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Full PDF Text Transcription

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SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED,Charge, Adaptor TO-220F TO-251N TO-252 1 23 1 23 1 23 BVDSS : 700V ID : 4A RDS(ON) : 0.8Ω 2 1 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
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