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2SA1814 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Very small-sized package permitting 2SA1814- applied sets to be made smaller and slimmer.
  • Adoption of FBET process.
  • High DC current gain (hFE=500 to 1200).
  • Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V).
  • High VEBO (VEBO≥15V). Package Dimensions unit:mm 2018B [2SA1814] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Puls.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features · Very small-sized package permitting 2SA1814- applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V). · High VEBO (VEBO≥15V).