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2SA1815 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • High power gain : PG=25dB (f=100MHz).
  • High cutoff frequency ; fT=750MHz typ.
  • Low collector-to-emitter saturation voltage.
  • Complementary pair with the 2SC4432. Package Dimensions unit:mm 2018A [2SA1815] C : Collector B : Base E : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB (f=100MHz). · High cutoff frequency ; fT=750MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pair with the 2SC4432.