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2SC6141 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ): 2SA2221 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)250 (--)230 (--)6 (--)15 (--)30 3.5 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1288 www.DataSheet4U.com 2SA2221/2SC6141 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications. Features • • • Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ): 2SA2221 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)250 (--)230 (--)6 (--)15 (--)30 3.