FC155 Datasheet | SANYO

Features - plex type of 2 devices (transistor with resistances and low saturation transistor) contained in one package, facilitating high-density mounting. Electrical Connection 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 Package Dimensions unit:mm 2104A [FC155] 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR1] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature [TR2] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit - 20 - 15 - 5 - 500 - 1 - 100 200 300 150 - 55 to +150 V V V m A A m A m W m W VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit - 20 - 15 - 5 - 500 - 1 - 5 200 300 150 - 55 to +150 V V V m A A m A m W m W Symbol Conditions Ratings Unit ˚C ˚C ˚C ˚C SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/31495MO (KOTO) TA-0178 No.5063-1/4 Electrical Characteristics at Ta = 25˚C Parameter [TR1] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input-OFF-State Voltage Input-ON-State Voltage Input Resistance Resistance Ratio [TR2] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage ICBO IEBO h FE(1) h FE(2) f T Cob VCE(sat) VBE(sat) VCB=- 15V, IE=0 VEB=- 4V, IC=0 VCE=- 2V, IC=- 10m A VCE=- 2V, IC=- 400m A...