Datasheet4U Logo Datasheet4U.com

RD2003JN - High-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Low VF.
  • High-Speed Switching Diode High breakdown voltage (VRRM=300V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R. M. S Forward Current Surge Forward Current Junction Temperature St.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RD2001-D Solid State Relays CARLO GAVAZZI
RD2006FR Planar Ultrafast Rectifier ON Semiconductor
RD200E Zener Diode NEC
RD200EB ZENER DIODES SEMTECH
RD20E Zener diode Excel Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
RD2003JS-SB Ultrahigh-Speed Switching Diode
RD2004JN High-Speed Switching Diode
RD2004JS-SB Ultrahigh-Speed Switching Diode
RD2004LN Ultrahigh-Speed Switching Diode
RD2004LS Ultrahigh-Speed Switching Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA1593 RD2003JN SANYO Semiconductors DATA SHEET RD2003JN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=300V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.