SeCoS Halbleitertechnologie GmbH 2SB1386
PNP Silicon Low Frequency Transistor
| Part No. | 2SB1386 |
|---|---|
| Datasheet | 2SB1386 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Silicon Low Frequency Transistor |
| Buy | Stock & Price |
FEATURES
Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 CLASSIFICATION OF hFE Product-Rank 2SB1386-P Range 82~180 Marking BHP 2SB1386-Q 120~270 BHQ 2SB1386-R 180~390 BHR SOT-89 123 A EC 4 B F G H J D K L PACKAGE INFORMATION Package MPQ SOT-89 1K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.2 0 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCBO VCEO VEBO IC Collector Power Dissipation PD Junction & Storage Temperature TJ, TSTG Note: (1) Single pulse, Pw=10ms. (2) When mounted on a 40⋅40⋅0.7 mm ceramic board. Ratings -30 -20 -6 -5 -10 0.5 2 150, -55~150 Unit V V V A(DC) A(Pulse) (1) W (2) °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Collect...