SST2602 - N-Channel Enhancement Mode Power MosFET

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SeCoS

Part number	SST2602
Manufacturer	SeCoS
File Size	365.66 KB
Description	N-Channel Enhancement Mode Power MosFET
Datasheet	SST2602 Datasheet
Additional preview pages of the SST2602 datasheet.

0.37Ref.

0.20 0.60 Ref.

The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

Low On-Resistance.
Capable of 2.5V Gate Drive D Dimensions in millimeters D 6 D 5 S 4 Date Code 2602 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TC=25 C ID@TC=70C IDM PD@TC=25 C o o o Ratings 20 ± 12 6.3 5 30 2 0.016 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and.

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Published: Jul 2, 2009 |