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SST2602 - N-Channel Enhancement Mode Power MosFET

General Description

0.37Ref.

0.20 0.60 Ref.

The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

Key Features

  • Low On-Resistance.
  • Capable of 2.5V Gate Drive D Dimensions in millimeters D 6 D 5 S 4 Date Code 2602 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TC=25 C ID@TC=70C IDM PD@TC=25 C o o o Ratings 20 ± 12 6.3 5 30 2 0.016 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SST2603 P-Channel MOSFET
SST2604 N-Channel Enhancement Mode Power MosFET
SST2605 P-Channel MOSFET
SST2610 N-Channel Enhancement Mode Power MosFET
SST2611B P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SST2602 6.3A, 20V,RDS(ON) 34m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST2602 is universally used for all commercial-industrial applications. 0.25 1.40 1.80 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0 o 10 o 1.20Ref. Features * Low On-Resistance * Capable of 2.5V Gate Drive D Dimensions in millimeters D 6 D 5 S 4 Date Code 2602 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.