DESCRIPTION
0.37Ref. 0.20 0.60 Ref. 2.60 3.00 0.25 1.40 1.80 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0 o 10 o 1.20Ref. FEATURES
* Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package D Dimensions in millimeters D 6 D 5 S 4 Date Code 2604 G 1 D 2 D 3 G S ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TC=25 C ID@TC=70C IDM PD@TC=25 C o o o Ratings 30 ± 20 5.5 4.4 20 2 0.016 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case 3 Symbol Max. Rthj-c Ratings 62.5 Unit o C /W Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SST2604 5.5 A, 3 0V,RDS(ON) 45m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS
( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
SeCoS Halbleitertechnologie GmbH
