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SST2604 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: www.DataSheet4U.com SST2604 5.5A, 3 0V,RDS(ON) 45m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.

General Description

0.37Ref.

0.20 0.60 Ref.

2.60 3.00 The SST2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

Key Features

  • Lower Gate Charge.
  • Fast Switching Characteristic.
  • Small Footprint & Low Profile Package D Dimensions in millimeters D 6 D 5 S 4 Date Code 2604 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TC=25 C ID@TC=70C IDM PD@TC=25 C o o o Ratings 30 ± 20 5.5 4.4 20 2 0.016 Unit V V A A A W W/ C o o Total Power Dissipati.

More Datasheets from SeCoS Halbleitertechnologie GmbH

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SST2622 N-Channel MOSFET
SST2623 P-Channel MOSFET
SST2625 P-Channel MOSFET
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SST2630 N-Ch Enhancement Mode Power MOSFET

SST2604 Distributor