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SST2605 Datasheet P-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: www.DataSheet4U.com SST2605 -4.0A, -30V,RDS(ON) 80m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.

General Description

0.37Ref.

0.20 0.60 Ref.

2.60 3.00 The SST2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

Key Features

  • Fast Switching Characteristic.
  • Lower Gate Charge D 0 o 10 o 1.20Ref. Dimensions in millimeters D 6 D 5 S 4.
  • Small Footprint & Low Profile Package 2605 Date Code G S 1 D 2 D 3 G Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -4.0 -3.3 -20 2.0 0.016 Unit V V A A A W W/ C o o 3 Total Powe.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number Description
SST2602 N-Channel Enhancement Mode Power MosFET
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SST2604 N-Channel Enhancement Mode Power MosFET
SST2610 N-Channel Enhancement Mode Power MosFET
SST2611B P-Channel MOSFET
SST2622 N-Channel MOSFET
SST2623 P-Channel MOSFET
SST2625 P-Channel MOSFET
SST2629S P-CHANNEL MOSFET
SST2630 N-Ch Enhancement Mode Power MOSFET

SST2605 Distributor