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SST2603 Datasheet PDF

SeCoS Halbleitertechnologie GmbH SST2603

The SST2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SST2603 is universally used for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
Part No. SST2603
Datasheet SST2603 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description P-Channel MOSFET
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SST2603 datasheet page 1 preview

DESCRIPTION

FEATURES

* Small package outline * Simple drive requirement

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range D G S Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg SOT-26 1.90REF 0.95REF 0.95REF 0.45 REF 2.60 3.00 1.2 REF 0.60 REF 1.40 1.80 0.30 0.55 2.70 0.10 Max 3.10 o 0 0.7 1.45 10 o Dimensions in millimeters Date Code D DS 6 54 2603 12 DD 3 G Ratings -20 ±12 -5 -4 -20 2 0.016 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Symbol Rthj-a Ratings 62.5 Unit oC /W 15-Jun-2010 Rev. C Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SST2603 -5A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.FET

ELECTRICAL CHARACTERISTICS

( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp.
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