The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TetraFET
D1019UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
1 2
4 3
A
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED
B
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
D G H
• LOW Crss • SIMPLE BIAS CIRCUITS
E F
PIN 1 PIN 3
DRAIN GATE
PIN 2 PIN 4
SOURCE SOURCE
• LOW NOISE • HIGH GAIN – 16 dB MINIMUM
DIM A B C D E F G H
mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67
Tol. 0.13 0.13 5° 0.13 0.02 0.13 0.20 REF
Inches 1.030 0.225 45° 0.280 0.005 0.55 0.060 0.120
Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.
D1019 Datasheet
