D1019 Datasheet PDF

MECHANICAL DATA

C 1 2 4 3 A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED B

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

D G H
● LOW Crss
● SIMPLE BIAS CIRCUITS E F PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE
● LOW NOISE
● HIGH GAIN – 16 dB MINIMUM DIM A B C D E F G H mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67 Tol. 0.13 0.13 5° 0.13 0.02 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.55 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF

APPLICATIONS

● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 50W 70V ±20V 5A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: E-mail: sales@semelab.co.uk 6/99 D1019UK

ELECTRICAL CHARACTERISTICS

(Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.