HFP2N70S Datasheet | SemiHow

Dec 2009 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 5.0 Ω ID = 1.6 A Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 5.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 1 2 3 1.Gate 2. Drain 3....