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SM4N60C Datasheet 600V N-Channel MOSFET

Manufacturer: SemiMOS

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Datasheet Details

Part number SM4N60C
Manufacturer SemiMOS
File Size 610.32 KB
Description 600V N-Channel MOSFET
Download SM4N60C Download (PDF)

Overview

SM4N60C 600V N-Channel MOSFET TO-220F SM4N60C KONGSON.

Key Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=15nC (Typ. ).
  • BVDSS=600V,ID=4A.
  • RDS(on) : 2.2 Ω (Max) @VG=10V.
  • 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100.

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