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SM4N65S-I - 650V N-Channel MOSFET

Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=13.7nC (Typ. ).
  • BVDSS=650V,ID=4A.
  • RDS(on) : 2.8 Ω (Max) @VG=10V.
  • 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Volt.

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Datasheet Details

Part number SM4N65S-I
Manufacturer SemiMOS
File Size 1.41 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet SM4N65S-I Datasheet

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Full PDF Text Transcription

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SM4N65S-I/SM4N65S-D 650V N-Channel MOSFET SM4N60S-I SM4N60S-D SM4N65S-I/SM4N65S-D KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=13.7nC (Typ.). □ BVDSS=650V,ID=4A □ RDS(on) : 2.8 Ω (Max) @VG=10V □ 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 650 4 2.
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