SM4N65S-I - 650V N-Channel MOSFET

Product Overview

Part number	SM4N65S-I
Manufacturer	SemiMOS
File Size	1.41 MB
Description	650V N-Channel MOSFET
Datasheet	SM4N65S-I Datasheet
Additional preview pages of the SM4N65S-I datasheet.

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=13.7nC (Typ. ).
BVDSS=650V,ID=4A.
RDS(on) : 2.8 Ω (Max) @VG=10V.
100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Volt.

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Published: Mar 30, 2025 |