SM4N65S-I Overview
SM4N65S-I/SM4N65S-D 650V N-Channel MOSFET SM4N60S-I SM4N60S-D SM4N65S-I/SM4N65S-D KONGSON.
SM4N65S-I Key Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg=13.7nC (Typ.)
- BVDSS=650V,ID=4A
- RDS(on) : 2.8 Ω (Max) @VG=10V
- 100% Avalanche Tested