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SM4N60S-D - 600V N-Channel MOSFET

Download the SM4N60S-D datasheet PDF (SM4N60S-I included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 600v n-channel mosfet.

Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=13.3nC (Typ. ).
  • BVDSS=600V,ID=4A.
  • RDS(on) : 2.3 Ω (Max) @VG=10V.
  • 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SM4N60S-I-SemiMOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SM4N60S-D
Manufacturer SemiMOS
File Size 849.71 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SM4N60S-D Datasheet

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Full PDF Text Transcription

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SM4N60S-I/SM4N60S-D 600V N-Channel MOSFET SM4N60S-I SM4N60S-D SM4N60S-I/SM4N60S-D KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=13.3nC (Typ.). □ BVDSS=600V,ID=4A □ RDS(on) : 2.3 Ω (Max) @VG=10V □ 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 600 4 2.
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