SM4N60S - 600V N-Channel MOSFET

Product Overview

Part number	SM4N60S
Manufacturer	SemiMOS
File Size	788.27 KB
Description	600V N-Channel MOSFET
Datasheet	SM4N60S Datasheet
Additional preview pages of the SM4N60S datasheet.

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=13.3nC (Typ. ).
BVDSS=600V,ID=4A.
RDS(on) : 2.3 Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=1.

📁 Similar Datasheet

SM4001 - RECTIFIER DIODES (AiT Components)
SM4001 - 1.0AMP. Surface Mount Glass Passivated Silicon Rectifiers (Kingtronics)
SM4001 - 1.0 A Surface Mount Silicon Rectifier (SEP ELECTRONIC)
SM4001 - GENERAL PURPOSE SILICON RECTIFIER (Dc Components)
SM4001 - Surface Mount Rectifiers (HY)
SM4001 - Standard Recovery SMD Rectifier Diodes (Diotec)
SM4001 - Surface Mount Standard Recovery Glass Passivated Rectifiers (Weitron Technology)
SM4001 - Standard silicon rectifier diodes (Semikron International)

Other Datasheets by SemiMOS

Published: Mar 30, 2025 |