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SM4N60S-I Datasheet 600V N-Channel MOSFET

Manufacturer: SemiMOS

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Datasheet Details

Part number SM4N60S-I
Manufacturer SemiMOS
File Size 849.71 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SM4N60S-I Datasheet

Overview

SM4N60S-I/SM4N60S-D 600V N-Channel MOSFET SM4N60S-I SM4N60S-D SM4N60S-I/SM4N60S-D.

Key Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=13.3nC (Typ. ).
  • BVDSS=600V,ID=4A.
  • RDS(on) : 2.3 Ω (Max) @VG=10V.
  • 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Volt.

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