BAV74 Datasheet | Siemens Semiconductor Group

.. Silicon Switching Diode Array q q BAV 74 For high-speed switching mon cathode Type BAV 74 Marking JAs Ordering Code (tape and reel) Q62702-A693 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 50 50 200 4.5 250 150 - 65 … + 150 Unit V m A A m W ˚C 600 460 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BAV 74 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 m A Reverse current VR = 50 V VR = 50 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 m A, IR = 10 m A, RL = 100 Ω measured at IR = 1 m A CD trr - - - - 2 4 p F ns V(BR) VF IR - - - - 0.1 100 50 - - - - 1 µA Values typ. max. Unit Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 p...