BUP602D Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 160 Collector current IC = ƒ(TC) parameter:.
BUP602D is IGBT manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BUP603D | IGBT |
| BUP604 | IGBT |
| BUP200 | IGBT |
| BUP200D | IGBT |
| BUP202 | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 160 Collector current IC = ƒ(TC) parameter:.