BUP604 Datasheet | Siemens Semiconductor Group

BUP 604 IGBT Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Avalanche rated Pin 1 G Type BUP 604 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4231-A2 Pin 3 E 600V 80A Package TO-218 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 80 50 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 160 100 TC = 25 °C TC = 90 °C Avalanche energy, single pulse 75 m J IC = 50 A, VCC = 50 V, RGE = 25 Ω L = 60 µH, Tj = 25 °C Power dissipation Ptot - 55 ... + 150 - 55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group Jul-31-1996 BUP 604 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - Rth JC ≤...