BUP603D Datasheet | Siemens Semiconductor Group

BUP 603D IGBT With Antiparallel Diode Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Including fast free-wheel diode Pin 1 G Type BUP 603D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4230-A2 Pin 3 E 600V 42A Package TO-218 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current, (limited by bond wire) ± 20 A 42 32 TC = 60 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 104 64 TC = 25 °C TC = 90 °C Diode forward current TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C Power dissipation Ptot - 55 ... + 150 - 55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group Dec-02-1996...