SVG083R4NP7
SVG083R4NP7 is manufactured by Silan Microelectronics.
Silan Microelectronics
SVG083R4NT(S)(P7)_Datasheet
120A, 80V N-CHANNEL MOSFET
DESCRIPTION
SVG083R4NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems.
1 3
1 3
TO-263-2L
1.Gate 2.Drain 3.Source
Features
- 120A, 80V, RDS(on)(typ.)=3.0m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant
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