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SVG086R0NS - 80V N-CHANNEL MOSFET

Download the SVG086R0NS datasheet PDF. This datasheet also covers the SVG086R0NT variant, as both devices belong to the same 80v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A, 80V, RDS(on)(typ. )=5.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 TO-220-3L 13 TO-252-2L 1 3 TO-263-2L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG086R0NT-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG086R0NS
Manufacturer Silan Microelectronics
File Size 378.00 KB
Description 80V N-CHANNEL MOSFET
Datasheet download datasheet SVG086R0NS Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVG086R0NL5 80V N-CHANNEL MOSFET
SVG086R0NT 80V N-CHANNEL MOSFET
SVG083R4NP7 80V N-CHANNEL MOSFET
SVG083R4NS 80V N-CHANNEL MOSFET
SVG083R4NT 80V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG086R0NT(S)(D)(L5)_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES  120A, 80V, RDS(on)(typ.)=5.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 TO-220-3L 13 TO-252-2L 1 3 TO-263-2L ORDERING INFORMATION Part No.