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SVG083R4NS - 80V N-CHANNEL MOSFET

Download the SVG083R4NS datasheet PDF. This datasheet also covers the SVG083R4NT variant, as both devices belong to the same 80v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG083R4NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A, 80V, RDS(on)(typ. )=3.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 1 2 3 TO-220-3L TO-247-3L KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG083R4NT-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG083R4NS
Manufacturer Silan Microelectronics
File Size 325.23 KB
Description 80V N-CHANNEL MOSFET
Datasheet download datasheet SVG083R4NS Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVG083R4NP7 80V N-CHANNEL MOSFET
SVG083R4NT 80V N-CHANNEL MOSFET
SVG083R6NAL5 80V N-CHANNEL MOSFET
SVG086R0NL5 80V N-CHANNEL MOSFET
SVG086R0NS 80V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG083R4NT(S)(P7)_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVG083R4NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. 2 1 3 1 3 TO-263-2L 1.Gate 2.Drain 3.Source FEATURES  120A, 80V, RDS(on)(typ.)=3.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 2 3 TO-220-3L TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.