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SVG083R4NT - 80V N-CHANNEL MOSFET

General Description

SVG083R4NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A, 80V, RDS(on)(typ. )=3.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 1 2 3 TO-220-3L TO-247-3L KEY.

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Datasheet Details

Part number SVG083R4NT
Manufacturer Silan Microelectronics
File Size 325.23 KB
Description 80V N-CHANNEL MOSFET
Datasheet download datasheet SVG083R4NT Datasheet

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Full PDF Text Transcription (Reference)

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Silan Microelectronics SVG083R4NT(S)(P7)_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVG083R4NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. 2 1 3 1 3 TO-263-2L 1.Gate 2.Drain 3.Source FEATURES  120A, 80V, RDS(on)(typ.)=3.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 2 3 TO-220-3L TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.