SVG083R6NAL5 Datasheet | Silan Microelectronics

Silan Microelectronics SVG083R6NAL5_Datasheet 138A, 80V N-CHANNEL MOSFET DESCRIPTION SVG083R6NAL5 is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - 138A, 80V, RDS(on)(typ.)=3.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - RoHS pliant KEY PERFORMANCE PARAMETERS Characteristic...