SVG083R6NAL5 - 80V N-CHANNEL MOSFET

Silan Microelectronics

General Description

SVG083R6NAL5 is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

138A, 80V, RDS(on)(typ. )=3.0m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant KEY.

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SVG083R6NAL5 80v n-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVG083R6NAL5
Manufacturer	Silan Microelectronics
File Size	398.55 KB
Description	80V N-CHANNEL MOSFET
Datasheet	SVG083R6NAL5 Datasheet

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Silan Microelectronics SVG083R6NAL5_Datasheet 138A, 80V N-CHANNEL MOSFET DESCRIPTION SVG083R6NAL5 is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  138A, 80V, RDS(on)(typ.)=3.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 80 2.0~4.0 3.